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VDRM ITGQM ITSM VT0 rT VDclink
= = = = = =
4500 600 3x103 1.9 3.5 2800
V A A V mW V
Asymmetric Gate turn-off Thyristor
5SGA 06D4502
PRELIMINARY
Doc. No. 5SYA1236-00 Jun. 04
* Patented free-floating silicon technology * Low on-state and switching losses * Central gate electrode * Industry standard housing * Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter Repetitive peak off-state voltage Repetitive peak reverse voltage Permanent DC voltage for 100 FIT failure rate
Characteristic values
Symbol Conditions VDRM VRRM VDclink Ambient cosmic radiation at sea level in open air. VGR 2 V
min
typ
max 4500 17 2800
Unit V V V
Parameter Repetitive peak off-state current Repetitive peak reverse current
Symbol Conditions IDRM IRRM VD = VDRM, VGR 2 V VR = VRRM, RGK = W
min
typ
max 20 50
Unit mA mA
Mechanical data
Maximum rated values
1)
Parameter Mounting force
Characteristic values
Symbol Conditions Fm Symbol Conditions Dp H m Ds Anode to Gate 0.1 mm
min 10 min
typ 11 typ 34 26
max 12 max
Unit kN Unit mm mm
Parameter Pole-piece diameter Housing thickness Weight Surface creepage distance
0.25 30
kg mm mm
Air strike distance Da Anode to Gate 20.5 1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SGA 06D4502
GTO Data
On-state
Maximum rated values
1)
Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral
Characteristic values
Symbol Conditions IT(AV)M IT(RMS) ITSM I2t ITSM I2t ITSM I2t Symbol Conditions VT V(T0) rT IH
1)
min
typ
max 210 330
Unit A A
3
Half sine wave, TC = 85 C
tp = 8.3 ms, Tvj = 125C, sine wave After Surge: VD = VR = 0 V tp = 10 ms, Tvj = 125C, sine wave After Surge: VD = VR = 0 V tp = 1 ms, Tvj = 125C, sine wave After Surge: VD = VR = 0 V
3.1x10 40x10 3x10
A A2s A A2s A A2s Unit V V mW A
3
3
45x10 6x10
3
3
18x10 min typ max 4 1.9 3.5 20
3
Parameter On-state voltage Threshold voltage Slope resistance Holding current
IT = 600 A, Tvj = 125C Tvj = 125C IT = 200...600 A Tvj = 25C
Turn-on switching
Maximum rated values
Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Min. on-time
Characteristic values
Symbol Conditions diT/dtcr diT/dtcr ton Symbol Conditions td tr Eon VD = 0.5 VDRM, Tvj = 125 C IT = 600 A, di/dt = 200 A/s, IGM = 20 A, diG/dt = 20 A/s, CS = 1 F, RS = 10 W Tvj = 125C, IT = 600 A, IGM = 20 A, diG/dt = 20 A/s f = 200 Hz f = 1 Hz
min
typ
max 400 600
Unit A/s A/s s
80 min typ max 1.5 3 0.8
Parameter Turn-on delay time Rise time Turn-on energy per pulse
Unit s s J
Turn-off switching
Maximum rated values
1)
Parameter Max. controllable turn-off current Spike Voltage Min. off-time
Characteristic values
Symbol Conditions ITGQM VDSP toff Symbol Conditions tS tf Eoff IGQM VD = 0.5 VDRM, Tvj = 125 C VDM VDRM, diGQ/dt = 20 A/s, ITGQ = ITGQM, RS = 10 W, CS = 1 F, LS = 0.15 H RCD Snubber VDM VDRM, VD = 0.5 VDRM diGQ/dt = 20 A/s, CS = 1 F, LS 0.15 H, RCD Snubber
min
typ
max 600 650
Unit A V s
80 min typ max 15 5 1.9 300
Parameter Storage time Fall time Turn-on energy per pulse Peak turn-off gate current
Unit s s J A
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1236-00 Jun. 04 page 2 of 5
5SGA 06D4502
Gate
Maximum rated values
1)
Parameter Repetitive peak reverse voltage Repetitive peak reverse current
Characteristic values
Symbol Conditions VGRM IGRM VGR = VGRM
min
typ
max 17 20
Unit V mA
Parameter Gate trigger voltage Gate trigger current
Symbol Conditions VGT IGT
1)
min
typ 1 2
max
Unit V A
Tvj = 25C, VD = 24 V, RA = 0.1 W
Thermal
Maximum rated values
Parameter Junction operating temperature Storage temperature range
Characteristic values
Symbol Tvj Tstg Symbol Rth(jc) Rth(jc)A Rth(jc)C
Conditions
min 0 0
typ
max 125 125
Unit C C Unit K/kW K/kW K/kW K/kW K/kW
Parameter Thermal resistance junction to case
Conditions Double side cooled Anode side cooled Cathode side cooled Single side cooled Double side cooled
min
typ
max 50 85 122 16 8
Thermal resistance case to heatsink (Double side cooled)
Rth(ch) Rth(ch)
Analytical function for transient thermal impedance:
ZthJC(t) = a Ri(1 - e -t/t i )
i =1
i Ri(K/kW) ti(s) 1 15.000 0.4610 2 5.200 0.0950 3 7.500 0.0120 4 0.100 0.0010 Fig. 1 Transient thermal impedance, junction to case.
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1236-00 Jun. 04 page 3 of 5
5SGA 06D4502
Fig. 2 General current and voltage waveforms with GTO-specific symbols.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1236-00 Jun. 04 page 4 of 5
5SGA 06D4502
Fig. 3 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.
Reverse avalanche capability
In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 s and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10...15 V.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. No. 5SYA1236-00 Jun. 04

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